HOMOEPITAXIAL DIAMOND SYNTHESIS BY DC ARC PLASMA-JET CHEMICAL-VAPOR-DEPOSITION

Homoepitaxial diamond films have been synthesized on (100) substrates by DC are plasma jet chemical vapor deposition. It was shown that fabr ication of epitaxial film with a smooth surface is possible at an appr opriate substrate temperature T-s with methane and carbon dioxide conc entrations of 1% each. At T-s greater than or equal to 930 degrees C, pyramidal hillocks form on the surface of the film, and irregular grai n particles appear. However, if the methane concentrations are raised, even when substrate temperature is high, epitaxial films with smooth surfaces are formed. Epitaxial diamond film with a smooth surface show s much stronger cathodoluminescence than the him with pyramidal hilloc ks. From the results of the X-ray double-crystal analysis, the crystal linity of the epitaxial diamond layer is higher than or equal to that of the substrate of high-pressure-synthesized diamond. These results i ndicate that synthesis of high quality diamond him at a high growth ra te; by DC are plasma jet CVD, is possible.