FINE-STRUCTURE OF THE 2P EXCITON IN ZNSE GAAS FILMS STUDIED BY RESONANT HYPER-RAYLEIGH AND HYPER-RAMAN SCATTERINGS/

Authors
MATSUSHITA S MINAMI F YOSHIDA K INOUE K AKINAGA H
Citation
S. Matsushita et al., FINE-STRUCTURE OF THE 2P EXCITON IN ZNSE GAAS FILMS STUDIED BY RESONANT HYPER-RAYLEIGH AND HYPER-RAMAN SCATTERINGS/, Journal of luminescence, 66-7(1-6), 1995, pp. 414-417
Citations number
7
Categorie Soggetti
Optics
Journal title
Journal of luminescence → ACNP
ISSN journal
00222313
Volume
66-7
Issue
1-6
Year of publication
1995
Pages
414 - 417
Database
ISI
SICI code
0022-2313(1995)66-7:1-6<414:FOT2EI>2.0.ZU;2-G
Abstract
We have investigated fine structure of the 2P exciton in ZnSe films gr own on GaAs substrates, using resonant hyper-Rayleigh and hyper-Raman scattering techniques. The 2P exciton line is found to show distinct f ine structure caused by envelope-hole coupling, in addition to splitti ng of the exciton state due to strain effects. A spin Hamiltonian mode l reproduces well che observed energy splitting and the polarization d ependence of the 2P exciton fine structure.