FORMATION OF RADIATION DEFECTS IN BINARY COMPOUNDS

Ideas are developed about the formation of primary radiation defects i n binary semiconductors as a process of excitation of a local region o f a crystal, containing a certain number of atoms, up to the point of a phase transition and restructuring of this region. The proposed mode l is used to calculate and compare with experiment the threshold atomi c-displacement energy for a series of II-VI compounds. The computed va lues of the thresholds are also presented for the compounds HgSe and H gTe which have not yet been studied experimentally. (C) 1996 American Institute of Physics.