INVESTIGATION OF ONE-ELECTRON AND 2-ELECTRON EXCHANGE BETWEEN NEUTRALAND IONIZED IMPURITY CENTERS IN SEMICONDUCTORS BY THE MOSSBAUER-SPECTROSCOPY

Authors
MASTEROV VF NASREDINOV FS NEMOV SA SEREGIN PP
Citation
Vf. Masterov et al., INVESTIGATION OF ONE-ELECTRON AND 2-ELECTRON EXCHANGE BETWEEN NEUTRALAND IONIZED IMPURITY CENTERS IN SEMICONDUCTORS BY THE MOSSBAUER-SPECTROSCOPY, Semiconductors, 30(5), 1996, pp. 472-476
Citations number
3
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
30
Issue
5
Year of publication
1996
Pages
472 - 476
Database
ISI
SICI code
1063-7826(1996)30:5<472:IOOA2E>2.0.ZU;2-K
Abstract
Fast one-electron exchange between neutral and ionized iron acceptor c enters in partially compensated GaP and two-electron exchange between neutral and ionized tin donor centers in partially compensated PbSe we re observed by Mossbauer spectroscopy. It is concluded that in each ca se the exchange between the impurity centers is carried out via valenc e banstates. (C) 1996 American Institute of Physics.