Vf. Masterov et al., INVESTIGATION OF ONE-ELECTRON AND 2-ELECTRON EXCHANGE BETWEEN NEUTRALAND IONIZED IMPURITY CENTERS IN SEMICONDUCTORS BY THE MOSSBAUER-SPECTROSCOPY, Semiconductors, 30(5), 1996, pp. 472-476
Fast one-electron exchange between neutral and ionized iron acceptor c
enters in partially compensated GaP and two-electron exchange between
neutral and ionized tin donor centers in partially compensated PbSe we
re observed by Mossbauer spectroscopy. It is concluded that in each ca
se the exchange between the impurity centers is carried out via valenc
e banstates. (C) 1996 American Institute of Physics.