ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON

The electroluminescence of photodiodes made of silicon doped with erbi um by the method of ion implantation is investigated with forward bias ing of the p-n junction. It is found that depending on the pumping cur rent there is a correlation between the intensities of the electrolumi nescence of the free excitons and erbium ions. A model involving the e xcitation of the f-shell of the optically active erbium ions is propos ed on the basis of an analysis of the experimental results. The model is based on the assumption that the erbium ions are excited via the bi nding (trapping) of free excitons in a neutral donor level, formed by an erbium-oxygen complex, followed by Auger excitation of the erbium f -shell accompanying the recombination of the bound exciton. The propos ed model makes it possible to describe the experimental results. (C) 1 996 American Institute of Physics.