INFRARED REFLECTION AND OPTICAL PHONONS IN EPITAXIAL LAYERS OF THE SOLID-SOLUTIONS INXGA1-XAS GAAS/

Authors
KOPYLOV AA MINTAIROV AM KHOLODILOV AN
Citation
Aa. Kopylov et al., INFRARED REFLECTION AND OPTICAL PHONONS IN EPITAXIAL LAYERS OF THE SOLID-SOLUTIONS INXGA1-XAS GAAS/, Semiconductors, 30(5), 1996, pp. 485-486
Citations number
3
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
30
Issue
5
Year of publication
1996
Pages
485 - 486
Database
ISI
SICI code
1063-7826(1996)30:5<485:IRAOPI>2.0.ZU;2-G
Abstract
Infrared reflection from InxGa1-xAs/GaAs (x = 0.12-0.26) layers in the region of the spectrum 100-400 cm(-1) is investigated. The reflection spectra are analyzed for the model ''epitaxial layer - semi-infinite substrate'' using the standard multioscillator dielectric function. Th e phonon frequencies are discussed in connection with the possible ord ering of the crystal lattice of the solid solution. (C) 1996 American Institute of Physics.