ACCURATE ELECTRON-CYCLOTRON-RESONANCE ETCHING OF SEMICONDUCTOR-LASER HETEROSTRUCTURES USING A SIMPLE LASER REFLECTOMETER

Citation
Ma. Parker et al., ACCURATE ELECTRON-CYCLOTRON-RESONANCE ETCHING OF SEMICONDUCTOR-LASER HETEROSTRUCTURES USING A SIMPLE LASER REFLECTOMETER, IEEE photonics technology letters, 8(6), 1996, pp. 818-820
Citations number
9
Categorie Soggetti
Optics,"Physics, Applied
ISSN journal
10411135
Volume
8
Issue
6
Year of publication
1996
Pages
818 - 820
Database
ISI
SICI code
1041-1135(1996)8:6<818:AEEOSH>2.0.ZU;2-U
Abstract
An in situ method of monitoring the electron cyclotron resonance etchi ng of III-V semiconductor heterostructures is discussed for in-plane l asers, Surface reflected and Fabry-Perot interference signals determin e the etch depth, rate and surface quality. The etching accuracy is be tter than 500 Angstrom. The etch monitor eliminates the dependence of accurate etching on calibrated etch rates, as well as the need for sel ective gas etchants and etch-stop layers typically required for comple x heterostructure devices. The presented in situ method can be integra ted into a digital data acquisition system, for accurate, reproducible process control in an automated manufacturing environment.