STRUCTURAL AND ELECTRONIC-PROPERTIES OF ION-BEAM-PREPARED AL1-XFEX SAMPLES

Al1-xFex thin films, with x = 0.14 and 0.23, were prepared from altern ate Al and Fe layers by irradiation with a Xe beam at two different te mperatures in order to reach either the amorphous or the quasicrystall ine state, Through thermal treatment, crystalline alloys are obtained. Rutherford back-scattering spectrometry of alpha-particles and transm ission electron microscopy have been used to characterize the atomic d istribution and structural state of the samples. X-ray emission spectr oscopy and conversion electron Mossbauer spectroscopy provided informa tion about the electronic distributions whereas electrical resistivity measurements allowed us to determine the metallic character of the co mpounds. The existence of a pseudo-gap and dehybridization of the s an d d electronic states of Fe are suggested to interpret the high-resist ivity behaviour and the isomer shift values, measured in the Fe concen tration range studied here.