A PHOTOELECTRON SPECTROSCOPIC STUDY OF SMALL SILICON-OXIDE CLUSTERS -SIO2, SI2O3, AND SI2O4

Citation
Ls. Wang et al., A PHOTOELECTRON SPECTROSCOPIC STUDY OF SMALL SILICON-OXIDE CLUSTERS -SIO2, SI2O3, AND SI2O4, Journal of physical chemistry, 100(21), 1996, pp. 8697-8700
Citations number
29
Categorie Soggetti
Chemistry Physical
ISSN journal
00223654
Volume
100
Issue
21
Year of publication
1996
Pages
8697 - 8700
Database
ISI
SICI code
0022-3654(1996)100:21<8697:APSSOS>2.0.ZU;2-6
Abstract
We present an anion photoelectron spectroscopic study of SiO2, Si2O3, and Si2O4. We obtained the photoelectron spectra of these small silico n oxide anion clusters at 4.66 eV photon energy. All the spectra show broad photodetachment features, suggesting that there is considerable geometry change between the anion and the neutral. The vertical detach ment energies are determined to be 2.76 (0.10), 2.75 (0.10), and 3.63 (0.1) eV for SiO2-, Si2O3-, and Si2O4-, respectively. The spectrum of Si2O3- shows a weak feature at lower binding energy, suggesting existe nce of another isomer. The spectra of GeO2- and Ge2O3- are also obtain ed and are compared to the silicon analogs. They are similar to the si licon oxide species, but both have higher detachment energies, 2.93 (0 .07) eV for GeO2- and 3.01 (0.07) eV for Ge2O3-. The Ge2O3- spectrum i s consistent with only one isomer. The structure and bonding of these small oxide clusters are discussed.