Ls. Wang et al., A PHOTOELECTRON SPECTROSCOPIC STUDY OF SMALL SILICON-OXIDE CLUSTERS -SIO2, SI2O3, AND SI2O4, Journal of physical chemistry, 100(21), 1996, pp. 8697-8700
We present an anion photoelectron spectroscopic study of SiO2, Si2O3,
and Si2O4. We obtained the photoelectron spectra of these small silico
n oxide anion clusters at 4.66 eV photon energy. All the spectra show
broad photodetachment features, suggesting that there is considerable
geometry change between the anion and the neutral. The vertical detach
ment energies are determined to be 2.76 (0.10), 2.75 (0.10), and 3.63
(0.1) eV for SiO2-, Si2O3-, and Si2O4-, respectively. The spectrum of
Si2O3- shows a weak feature at lower binding energy, suggesting existe
nce of another isomer. The spectra of GeO2- and Ge2O3- are also obtain
ed and are compared to the silicon analogs. They are similar to the si
licon oxide species, but both have higher detachment energies, 2.93 (0
.07) eV for GeO2- and 3.01 (0.07) eV for Ge2O3-. The Ge2O3- spectrum i
s consistent with only one isomer. The structure and bonding of these
small oxide clusters are discussed.