UV ABSORPTION AND LUMINESCENCE IN SILICON OXYNITRIDE PREPARED BY HYDROGEN-FREE SPCVD-PROCESS

Citation
Em. Dianov et al., UV ABSORPTION AND LUMINESCENCE IN SILICON OXYNITRIDE PREPARED BY HYDROGEN-FREE SPCVD-PROCESS, Optical materials, 5(3), 1996, pp. 169-173
Citations number
15
Categorie Soggetti
Material Science",Optics
Journal title
ISSN journal
09253467
Volume
5
Issue
3
Year of publication
1996
Pages
169 - 173
Database
ISI
SICI code
0925-3467(1996)5:3<169:UAALIS>2.0.ZU;2-M
Abstract
UV absorption and luminescence are investigated in bulk samples of sil icon oxynitride prepared by a hydrogen-free SPCVD-process (surface pla sma chemical vapour deposition). The UV absorption spectra, apart from the well-known silicon oxygen-deficient centre (Si-ODC), exhibit two unknown absorption bands with maxima at 5.77 and 4.54 eV and two unkno wn luminescence bands at 3.55 and 3.03 eV under laser excitation at 25 7 nm (4.83 eV). These new bands are supposed to be due to a nitrogen-m odified silicon oxygen-deficient centre.