MODELING OF ARGON-IMPLANTATION-INDUCED BORON REDISTRIBUTION IN SILICON

Numerical simulation of the redistribution of boron atoms in argon-imp lanted silicon wafers has been performed. The virgin wafers were unifo rmly doped with boron. The redistribution of boron atoms has been obse rved for high dose argon implantation (dosage = 1 x 10(15) cm(-2)) aft er annealing at temperatures of 900 degrees C and 1000 degrees C, whil e it was completely absent in the tow-dose implantation. We suggest th at the excess self-interstitials generated after the recrystallization of the amorphized layer are responsible for the redistribution. The i nteraction of these excess self-interstitials with boron atoms is thro ugh the kickout mechanism by which a large number of mobile boron spec ies at interstitial sites are produced. The experimental post-annealed boron profiles for the high-dose implantation were numerically simula ted both for 900 degrees C and 1000 degrees C annealing.