MONTE-CARLO SIMULATION OF THE GROWTH OF SEMICONDUCTOR QUANTUM WIRES

The results of Monte Carlo simulation of the growth of semiconductors on (001), (111), and (411) surfaces are presented. The simulation mode l includes tetrahedral lattice coordination of material, atom-atom int eractions out to second-nearest neighbors, and surface reconstruction effects. The simulation results show that the transition from rough to smooth growth mode for the (111) surface occurs at lower temperatures than for growth on the (001) surface, indicating a higher diffusion c oefficient of adatoms on the (111) surface in comparison with (001). T he results of simulation growth on the (411) surface do not show any e ssential difference from (001) growth. The formation of structures on the top of ridges formed on (001) and (411) planes has been simulated. The (111) side walls were found to be flat in both cases owing to a s ubstrate temperature which is high enough to ensure high mobility of a datoms on the (111) surface. The (001) and (411) surfaces on the top o f the ridges showed approximately the same quality and the only differ ence found was in their shape, which was symmetric for the (001), and not symmetric for the (411) case.