SURFACE-MORPHOLOGY DUE TO ENHANCED MIGRATION IN HETEROEPITAXIAL GROWTH OF COMPOUND SEMICONDUCTORS

Authors
ROUHANI MD GUE AM MALEK R BOUYSSOU G ESTEVE D
Citation
Md. Rouhani et al., SURFACE-MORPHOLOGY DUE TO ENHANCED MIGRATION IN HETEROEPITAXIAL GROWTH OF COMPOUND SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 37(1-3), 1996, pp. 25-29
Citations number
18
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
37
Issue
1-3
Year of publication
1996
Pages
25 - 29
Database
ISI
SICI code
0921-5107(1996)37:1-3<25:SDTEMI>2.0.ZU;2-9
Abstract
Monte Carlo technique and Valence force field approximation are used t o investigate the heteroepitaxial growth with high lattice mismatch. I t is shown that the growing surface becomes rough very rapidly. Its mo rphology is stabilized and shows V-grooves with (111) facets. The groo ves are filled with highly mobile liquid-like atoms that can be incorp orated in stable solid-like positions through collective motions and r eactions.