SEMIINSULATING PROPERTIES CONTROL BY CVD PROCESS MODELING

SIPOS films were deposited from a mixture of disilane and nitrous oxid e in a tubular hot wall reactor and their thickness and oxygen content were measured. A detailed chemical mechanism is proposed to represent homogeneous and heterogeneous reactions and the CVD2 model taking int o account hydrodynamics and mass transfer with chemical reactions is a djusted to SIPOS deposition. A good agreement between experimental res ults and model predictions for various operating conditions is obtaine d. By the use of CVD2 model, the main chemical pathways are identified and an extensive comprehension of the experimental evidences is possi ble.