STOICHIOMETRIC DISTURBANCES IN MULTI-ATOMIC MULTILAYERED STRUCTURES DUE TO ION-IMPLANTATION THROUGH MASK OPENINGS

In this paper, a Monte Carlo computer code based on the linear cascade theory has been used to calculate stoichiometric disturbances in mult i-atomic multilayered structures. The two-dimensional excess interstit ials distribution and the two-dimensional oxygen-recoil-atoms distribu tion in silicon substrate resulting from a 50 keV Ge+ ion implantation through a thick window mask and an oxide mask window presenting taper ed edge are presented. We calculate through computer simulation, the r edistribution of target atoms in the vicinity of the mask edges that w ill influence the production of end-of-range defects in an annealing s tep. Recoil implantation of oxygen atoms in silicon over tens of angst roms during ion implantation through an oxide mask window is also evid enced.