DIFFUSION CONSTANT OF GA, IN AND AS ADATOMS ON GAAS(001) SURFACE - MOLECULAR-DYNAMICS CALCULATIONS

Authors
PALMA A SEMPRINI E TALAMO A TOMASSINI N
Citation
A. Palma et al., DIFFUSION CONSTANT OF GA, IN AND AS ADATOMS ON GAAS(001) SURFACE - MOLECULAR-DYNAMICS CALCULATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 37(1-3), 1996, pp. 135-138
Citations number
23
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
37
Issue
1-3
Year of publication
1996
Pages
135 - 138
Database
ISI
SICI code
0921-5107(1996)37:1-3<135:DCOGIA>2.0.ZU;2-D
Abstract
A valence force field to reproduce both the phonon dispersion curves o f crystalline GaAs and first principle derived interaction energies of Ga, In and As adatoms on GaAs (001) surface has been optimized. Calcu lations of diffusion constant of Ga, In and As atoms on the GaAs surfa ce have been performed by molecular dynamics classical trajectory simu lations.