NEW TRENDS IN ATOMIC-SCALE SIMULATION OF WET CHEMICAL ETCHING OF SILICON WITH KOH

Authors
CAMON H MOKTADIR Z DJAFARIROUHANI M
Citation
H. Camon et al., NEW TRENDS IN ATOMIC-SCALE SIMULATION OF WET CHEMICAL ETCHING OF SILICON WITH KOH, Materials science & engineering. B, Solid-state materials for advanced technology, 37(1-3), 1996, pp. 142-145
Citations number
12
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
37
Issue
1-3
Year of publication
1996
Pages
142 - 145
Database
ISI
SICI code
0921-5107(1996)37:1-3<142:NTIASO>2.0.ZU;2-Z
Abstract
A new atomic scale model has been developed to simulate anisotropic et ching of silicon in KOH solutions. This model is based on the influenc e of the number of hydroxide groups attached to atoms. Etch rates and macroscopic activation energies have been calculated and compared with experimental data. Microscopic surface roughness has been investigate d for <100> and <111> surface.