FROM ATOMIC PARAMETERS TO ANISOTROPIC ETCHING DIAGRAMS

Authors
MOLDOVAN N ILIE M
Citation
N. Moldovan et M. Ilie, FROM ATOMIC PARAMETERS TO ANISOTROPIC ETCHING DIAGRAMS, Materials science & engineering. B, Solid-state materials for advanced technology, 37(1-3), 1996, pp. 146-149
Citations number
3
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
37
Issue
1-3
Year of publication
1996
Pages
146 - 149
Database
ISI
SICI code
0921-5107(1996)37:1-3<146:FAPTAE>2.0.ZU;2-6
Abstract
A Monte Carlo program and a program based on the formula of the evolut ion of atom disappearance probabilities were used for the simulation o f anisotropic etching of silicon-like crystal dots containing several thousands of atoms. An additional program extracts the local values of the etching rates and represents them in polar diagrams. The obtained figures respect the symmetry of the crystal, but the etching diagrams call be multiple valued and may bear specific distortions due to the limited extent of the considered crystal dots.