STRUCTURE MODELS OF THE C-TYPE DEFECT ON SI(001)

Authors
MIYAZAKI T UDA T TERAKURA K
Citation
T. Miyazaki et al., STRUCTURE MODELS OF THE C-TYPE DEFECT ON SI(001), Materials science & engineering. B, Solid-state materials for advanced technology, 37(1-3), 1996, pp. 168-171
Citations number
16
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
37
Issue
1-3
Year of publication
1996
Pages
168 - 171
Database
ISI
SICI code
0921-5107(1996)37:1-3<168:SMOTCD>2.0.ZU;2-P
Abstract
New structure models for an important type of defect, the ''C-type'' d efect, on the Si(001) surface are proposed and their stability and the ir relation to scanning tunnelling microscopy images are studied by la rge-scale ab initio calculations. The crucial aspect of the new models is the presence of a vacancy in the second layer, in contrast to a na ive picture assuming two vacancies on the surface.