DYNAMICS OF PARTIAL DISLOCATIONS IN SILICON

Authors
HANSEN LB STOKBRO K LUNDQVIST BI JACOBSEN KW
Citation
Lb. Hansen et al., DYNAMICS OF PARTIAL DISLOCATIONS IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 37(1-3), 1996, pp. 185-188
Citations number
18
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
37
Issue
1-3
Year of publication
1996
Pages
185 - 188
Database
ISI
SICI code
0921-5107(1996)37:1-3<185:DOPDIS>2.0.ZU;2-R
Abstract
Atomic-scale calculations for the dynamics of the 90 degrees partial g lide dislocation in silicon are made using the effective-medium tight- binding theory. Kink formation and migration energies for the reconstr ucted partial dislocation are compared with experimental results for t he mobility of this dislocation. The results confirm the theory that t he partial moves in the dissociated state via the formation of stable kinks. The correlation between glide activation energy and band gap in semiconducting systems is discussed.