ELASTIC-CONSTANTS IN DEFECTED AND AMORPHOUS-SILICON BY TIGHT-BINDING MOLECULAR-DYNAMICS

Authors
DESANDRE G COLOMBO L BOTTANI C
Citation
G. Desandre et al., ELASTIC-CONSTANTS IN DEFECTED AND AMORPHOUS-SILICON BY TIGHT-BINDING MOLECULAR-DYNAMICS, Materials science & engineering. B, Solid-state materials for advanced technology, 37(1-3), 1996, pp. 189-192
Citations number
12
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
37
Issue
1-3
Year of publication
1996
Pages
189 - 192
Database
ISI
SICI code
0921-5107(1996)37:1-3<189:EIDAAB>2.0.ZU;2-9
Abstract
The general fluctuation formulas for elastic constants calculation by computer simulation are extended to the quantum mechanical context of tight-binding molecular dynamics. The new formulas here are used to in vestigate the elastic properties of amorphous silicon, either obtained by quenching from the melt or by ion implantation. The effects of a t hermal annealing treatment are also discussed.