POSTGROWTH DIFFUSION OF BE-DOPED INGAAS EPITAXIAL LAYERS - EXPERIMENTAL AND SIMULATED DISTRIBUTIONS

Authors
KOUMETZ S MARCON J KETATA K KETATA M LEFEBVRE F MARTIN P LAUNAY P
Citation
S. Koumetz et al., POSTGROWTH DIFFUSION OF BE-DOPED INGAAS EPITAXIAL LAYERS - EXPERIMENTAL AND SIMULATED DISTRIBUTIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 37(1-3), 1996, pp. 208-211
Citations number
15
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
37
Issue
1-3
Year of publication
1996
Pages
208 - 211
Database
ISI
SICI code
0921-5107(1996)37:1-3<208:PDOBIE>2.0.ZU;2-6
Abstract
Be diffusion during post-growth annealing has been investigated from I nGaAs epitaxial layers grown between InGaAs undoped layers. A General Substitutional-Interstitial Diffusion mechanism is proposed to explain the observed concentration profiles and related Be diffusion. The con centration dependent diffusivity has also been covered to perform an i mproved data lining of Be diffusion profiles.