EFFECTS OF DOPING ON THE ELECTRONIC-PROPERTIES OF SEMICONDUCTING IRONDISILICIDE

Authors
TOMM Y IVANEKO L IRMSCHER K BREHME S HENRION W SIEBER I LANGE H
Citation
Y. Tomm et al., EFFECTS OF DOPING ON THE ELECTRONIC-PROPERTIES OF SEMICONDUCTING IRONDISILICIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 37(1-3), 1996, pp. 215-218
Citations number
9
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
37
Issue
1-3
Year of publication
1996
Pages
215 - 218
Database
ISI
SICI code
0921-5107(1996)37:1-3<215:EODOTE>2.0.ZU;2-J
Abstract
Undoped and doped beta-FeSi2 single crystals were prepared by chemical transport reaction using iodine as transporting agent. The doping ele ments used were Co, Mn, Cr and Ni. The effect of impurities was studie d by EPR and electrical measurements, The impurities substitute Fe on its two inequivalent lattice sites. Electrical measurements indicated p-type behavior. For Cr-doped samples an activation energy of 75 meV w as determined. Optical studies on (Fe1-xCox)Si-2(x less than or equal to 0.15) layers prepared by ion implantation into Si(100) showed a mon otonous decrease of the gap.