The surface superconductivity induced by applying an electric field pe
rpendicular to the surface of a high-T-c superconductor covered by an
insulator and a gate electrode is studied theoretically. Taking the id
ea into account that the change of the surface carrier density confine
d in a thin screening layer modulates the transport properties of supe
rconductors, we develop a simple method based on the Chen and Yang mod
el to study the T-c shift dependence on the applied voltage in the fra
meworks of a Thomas-Fermi approximation and BCS theory. In such a case
a novel boundary condition is introduced to modify the G-L equations.
Solving the modified one, the T-c shift derived by the present model
is similar in qualitative behavior to the Shapiro result, but much sim
pler in form. In addition, it is shown to be proportional to the appli
ed field (the square of applied field) for thin film (thick film) for
a given material. Based on our simple results, the critical current de
nsity J(c) and nucleation field H-c3 as functions of the applied volta
ge are easily derived.