GENERATING ION-IMPLANTATION PROFILES IN ONE AND 2 DIMENSIONS .2. DEPTH-DEPENDENT MOMENTS AND LINE-SOURCE RESPONSES

In this, the second of two papers, various techniques and models are p roposed for the extraction of depth-dependent lateral moments from the depth-independent mixed moments produced by transport equation solver s. These depth-dependent moments are then compared with those obtained directly from Monte Carlo simulations. A set of such comparisons, usi ng consistent input quantities, is performed over a range of ion-targe t mass ratios and energies. The depth-dependent moments are then combi ned with Pearson and/or Johnson curves to form two-dimensional ion imp lantation profiles. Comparisons are made between these line-source res ponses (LSRs) and LSRs obtained directly from Monte Carlo simulations into a-Si for the various models over a range of energies and ion type s. Selection of appropriate models leads to LSRs for the ions B, P and As implanted into a-Si which are in good agreement with Monte Carte s imulations over three orders of magnitude of profile concentration. Th e techniques described will enable two-dimensional profile information to be stored and regenerated, quickly and efficiently, within process simulators so that rapid optimization of processing parameters may be achieved.