EXCITON LOCALIZATION EFFECTS AND HETEROJUNCTION BAND OFFSET IN (GA,IN)P-(AL,GA,IN)P MULTIPLE-QUANTUM WELLS

Authors
DAWSON MD DUGGAN G
Citation
Md. Dawson et G. Duggan, EXCITON LOCALIZATION EFFECTS AND HETEROJUNCTION BAND OFFSET IN (GA,IN)P-(AL,GA,IN)P MULTIPLE-QUANTUM WELLS, Physical review. B, Condensed matter, 47(19), 1993, pp. 12598-12604
Citations number
29
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
47
Issue
19
Year of publication
1993
Pages
12598 - 12604
Database
ISI
SICI code
0163-1829(1993)47:19<12598:ELEAHB>2.0.ZU;2-P
Abstract
Disordered Ga0.52In0.48P-(Al0.7Ga0.3)0.52In0.48P bulk and quantum-well epilayers, lattice matched to GaAs substrates misoriented from (100), have been studied by low-temperature photoluminescence (PL) and photo luminescence excitation spectroscopy (PLE). The effects of excitonic w eak localization are discussed by comparison between the PL and PLE da ta. Envelope-function fitting of the excitonic transitions observed in PLE has been used to determine a conduction-band discontinuity DELTAE (c) of approximately 0.67 DELTAE(g), providing strong support for the value obtained by Liedenbaum et al.