INFLUENCE OF INTERFACE PHONONS ON INTERSUBBAND SCATTERING IN ASYMMETRIC COUPLED QUANTUM-WELLS

Authors
EDUCATO JL LEBURTON JP BOUCAUD P VAGOS P JULIEN FH
Citation
Jl. Educato et al., INFLUENCE OF INTERFACE PHONONS ON INTERSUBBAND SCATTERING IN ASYMMETRIC COUPLED QUANTUM-WELLS, Physical review. B, Condensed matter, 47(19), 1993, pp. 12949-12952
Citations number
25
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
47
Issue
19
Year of publication
1993
Pages
12949 - 12952
Database
ISI
SICI code
0163-1829(1993)47:19<12949:IOIPOI>2.0.ZU;2-J
Abstract
A theoretical investigation of intersubband transitions in asymmetric coupled GaAs-AlxGa1-xAs quantum wells is presented in order to underst and the role of interface phonons on intersubband scattering times est imated from photoluminescence up-conversion. Photoexcited carrier beha vior is analyzed in relation to recent measurements and shows time con stants for electron relaxation in agreement with experimental data. We show that interface modes are vital to intersubband relaxation in the se structures.