ON THE INITIAL ANNEALING STAGE OF AS+ IMPLANTED SILICON

The regrowth kinetics of As+-implanted, amorphous silicon has been stu died by varying annealing temperature, implantation energy, implantati on dose, and crystal orientation of the silicon substrate. hi particul ar, the regrowth kinetics during the initial annealing regime has been investigated. This first annealing stage, which lasts only for about 5 minutes, has been found for all chosen annealing temperatures. The r egrowth rates, that is, the velocity of the crystalline/amorphous inte rface, varies from 0.5 nm/min for 200-degrees-C anneals up to 10 nm/mi n for heat treatments at 550-degrees-C. The activation energies in Reg ime I were found to be 0.25 eV for low temperatures and 1 eV for annea ling temperatures above 500-degrees-C. Single vacancies and divacancie s, respectively, are believed to dominate the regrowth mechanisms in t hese two temperature regions.