LOW-TEMPERATURE POLYCRYSTALLINE LINE SILICON THIN-FILM-TRANSISTOR WITH SILICON-NITRIDE ION STOPPER

Authors
LEE KH JHON YM CHA HJ JANG J
Citation
Kh. Lee et al., LOW-TEMPERATURE POLYCRYSTALLINE LINE SILICON THIN-FILM-TRANSISTOR WITH SILICON-NITRIDE ION STOPPER, IEEE electron device letters, 17(6), 1996, pp. 258-260
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
17
Issue
6
Year of publication
1996
Pages
258 - 260
Database
ISI
SICI code
0741-3106(1996)17:6<258:LPLSTW>2.0.ZU;2-6
Abstract
The authors have fabricated a new low temperature polycrystalline sili con (poly-Si) thin film transistor (TFT) with silicon nitride (SiNx) i on-stopper and laser annealed poly-Si, The fabricated poly-Si TFT usin g SiNx as the ion-stopper as well as the gate insulator exhibited a he ld effect mobility of 110 cm(2)/Vs, threshold voltage of 3.5 V, subthr eshold slope of 0.48 V/dec., and on/off current ratio of similar to 10 (6). Low off-state leakage current of 2.4 x 10(-12) A/mu m at the drai n voltage of 5 V and gate voltage of -5 V was achieved.