HIGHLY RECTIFYING AU-CONTACTS ON DIAMOND-ON-SILICON SUBSTRATE

Authors
GLUCHE P WOLTER SD BORST TH EBERT W VESCAN A KOHN E
Citation
P. Gluche et al., HIGHLY RECTIFYING AU-CONTACTS ON DIAMOND-ON-SILICON SUBSTRATE, IEEE electron device letters, 17(6), 1996, pp. 270-272
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
17
Issue
6
Year of publication
1996
Pages
270 - 272
Database
ISI
SICI code
0741-3106(1996)17:6<270:HRAODS>2.0.ZU;2-K
Abstract
Au-Schottky diodes have been fabricated on highly oriented diamond (HO D) films, grown on silicon using ac-bias nucleation and microwave plas ma chemical vapor deposition, The active layers were selectively grown and doped by solid boron source, Nigh rectification ratios were obtai ned up to 500 degrees C in a bias voltage range up to +/-15 V, A curre nt density of more than 1 A/cm(2) and a breakdown field strength up to 2.0 . 10(6) V/cm for point contacts has been demonstrated.