QUANTIZATION EFFECTS IN INVERSION-LAYERS OF PMOSFETS ON SI(100) SUBSTRATES

The 2-D hole gas distributions within inversion layers of PMOSFET's ha ve been evaluated by solving the coupled Schrodinger equation and Pois son equation self-consistently based on the effective-mass approximati on with the light hole and heavy hole subbands taken into account The threshold voltage shift resulting from the carrier redistribution due to quantization effects is found to be more significant for PMOSFET's than NMOSFET's on (100) Si substrates, For a certain substrate doping concentration, the threshold voltage shift from the classical value du e to quantization effects is found to be a combination of substrate ba nd bending and oxide potential differences between the classical and t he quantum mechanical models.