OXYNITRIDE GATE DIELECTRIC GROWN IN NITRIC-OXIDE (NO) - THE EFFECT OFREOXIDATION ON DIELECTRIC RELIABILITY OF THE ACTIVE EDGE

Citation
B. Maiti et al., OXYNITRIDE GATE DIELECTRIC GROWN IN NITRIC-OXIDE (NO) - THE EFFECT OFREOXIDATION ON DIELECTRIC RELIABILITY OF THE ACTIVE EDGE, IEEE electron device letters, 17(6), 1996, pp. 279-281
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
07413106
Volume
17
Issue
6
Year of publication
1996
Pages
279 - 281
Database
ISI
SICI code
0741-3106(1996)17:6<279:OGDGIN>2.0.ZU;2-V
Abstract
Reoxidation of an oxynitride gate dielectric grown by NO anneal of the rmal oxide has been studied, This process has demonstrated similar to 3-5X improvement of Q(BD) Of active edge intensive capacitors in compa rison to thermal oxide, N2O and NO oxynitride. This improvement is bel ieved to be due to the reduction of local thinning of gate dielectric at the field oxide edge which also reduces local build-up of positive charge near the gate electrode at the isolation edges.