OXYNITRIDE GATE DIELECTRIC GROWN IN NITRIC-OXIDE (NO) - THE EFFECT OFREOXIDATION ON DIELECTRIC RELIABILITY OF THE ACTIVE EDGE

Reoxidation of an oxynitride gate dielectric grown by NO anneal of the rmal oxide has been studied, This process has demonstrated similar to 3-5X improvement of Q(BD) Of active edge intensive capacitors in compa rison to thermal oxide, N2O and NO oxynitride. This improvement is bel ieved to be due to the reduction of local thinning of gate dielectric at the field oxide edge which also reduces local build-up of positive charge near the gate electrode at the isolation edges.