B. Maiti et al., OXYNITRIDE GATE DIELECTRIC GROWN IN NITRIC-OXIDE (NO) - THE EFFECT OFREOXIDATION ON DIELECTRIC RELIABILITY OF THE ACTIVE EDGE, IEEE electron device letters, 17(6), 1996, pp. 279-281
Reoxidation of an oxynitride gate dielectric grown by NO anneal of the
rmal oxide has been studied, This process has demonstrated similar to
3-5X improvement of Q(BD) Of active edge intensive capacitors in compa
rison to thermal oxide, N2O and NO oxynitride. This improvement is bel
ieved to be due to the reduction of local thinning of gate dielectric
at the field oxide edge which also reduces local build-up of positive
charge near the gate electrode at the isolation edges.