ISOLATION PROCESS DEPENDENCE OF CHANNEL MOBILITY IN THIN-FILM SOI DEVICES

Authors
HUANG CL SOLEIMANI H GRULA G ARORA ND ANTONIADIS D
Citation
Cl. Huang et al., ISOLATION PROCESS DEPENDENCE OF CHANNEL MOBILITY IN THIN-FILM SOI DEVICES, IEEE electron device letters, 17(6), 1996, pp. 291-293
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
17
Issue
6
Year of publication
1996
Pages
291 - 293
Database
ISI
SICI code
0741-3106(1996)17:6<291:IPDOCM>2.0.ZU;2-Y
Abstract
Degradation of NMOS and enhancement of PMOS I-V characteristics are fo und to be dependent on specific isolation processes in thin-film SOI d evices, These variations are due to mobility decrease in NMOS and incr ease In PMOS, which can be attributed to the isolation-process-related compressive strain of the silicon film, Magnitudes of mobility variat ion as high as 40% are observed in the affected SOI devices.