ON THE RELATIONSHIP BETWEEN THE BULK RECOMBINATION LIFETIME AND THE EXCESS 1 F NOISE IN SILICON P-N-JUNCTION DIODES/

In this paper, the relationship between the bulk recombination lifetim e and the excess 1/f noise in Si n(+)p junction diodes is investigated . Two types of behaviour can be distinguished: for low-lifetime substr ates (tau < 10 mu s), the low-frequency noise spectral density is foun d experimentally to obey a power law of the kind S-I similar to tau(0. 18+/-0.05). For high lifetime diodes on the other hand, not such a rel ationship is observed, indicating a different origin of the underlying noise sources. These findings will be compared and discussed with pre viously proposed theoretical and empirical relationships. Copyright (C ) 1996 Published by Elsevier Science Ltd