V. Aninkevicius et al., TRANSVERSE TUNNELING TIME CONSTANT ESTIMATED FROM HOT-ELECTRON NOISE IN GAAS-BASED HETEROSTRUCTURE, Solid state communications, 98(11), 1996, pp. 991-995
Electric noise characteristics of a triple-heterojunction AlGaAs/GaAs/
AlAs/GaAs structure are measured at 10 GHz frequency for the electric
field (less than or equal to 1.3 kV/cm) applied in the interface plane
. The maximum in the dependence of the longitudinal diffusion coeffici
ent (deduced from the spectral density of current fluctuations) is obs
erved at 1 kV/cm and interpreted as being brought about by back-and-fo
rth transverse tunnelling of hot electrons between the quantum wells s
eparated by a thin AlAs barrier, the wells being characterized by diff
erent electron mobility. The tunnelling time constant is found from th
e height of the maximum and, independently, from the quenching of the
maximum in short samples. Copyright (C) 1996 Published by Elsevier Sci
ence Ltd