OBSERVATION OF A TEMPORAL EVOLUTION OF DEFECTED EPITAXIAL ERBIUM SILICIDE LAYERS AT ROOM-TEMPERATURE

Authors
SAINTENOY S WETZEL P PIRRI C BOLMONT D GEWINNER G
Citation
S. Saintenoy et al., OBSERVATION OF A TEMPORAL EVOLUTION OF DEFECTED EPITAXIAL ERBIUM SILICIDE LAYERS AT ROOM-TEMPERATURE, Solid state communications, 98(11), 1996, pp. 1015-1019
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
98
Issue
11
Year of publication
1996
Pages
1015 - 1019
Database
ISI
SICI code
0038-1098(1996)98:11<1015:OOATEO>2.0.ZU;2-L
Abstract
We present angle-resolved photoemission spectra of the root 3x root 3R 30 degrees ErSi2-x (0001) surface (x similar to 0.3) under ultra-high vacuum conditions at room temperature. An ordering process in the atom ic structure of the topmost layers is clearly observed over several ho urs or days. This change in atomic order is confirmed by low-energy el ectron diffraction. It is particularly marked for ultra-thin silicide layers grown by solid phase epitaxy or coevaporation in the 500 degree s-600 degrees C temperature range. Copyright (C) 1996 Published by Els evier Science Ltd