CHARACTERISTICS OF EPITAXIAL-GROWTH OF CE O2 FILMS ON SILICON SUBSTRATES

Authors
SMOLSKII OV MAMUTIN VV KARTENKO NF DENISOV DV KOPEV PS MELEKH BT
Citation
Ov. Smolskii et al., CHARACTERISTICS OF EPITAXIAL-GROWTH OF CE O2 FILMS ON SILICON SUBSTRATES, Pis'ma v Zurnal tehniceskoj fiziki, 22(1), 1996, pp. 68-73
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Pis'ma v Zurnal tehniceskoj fiziki → ACNP
ISSN journal
03200116
Volume
22
Issue
1
Year of publication
1996
Pages
68 - 73
Database
ISI
SICI code
0320-0116(1996)22:1<68:COEOCO>2.0.ZU;2-T