TIME DRIFT OF PARAMETERS OF INDIUM PHOSPH IDE-SILICON DIOXIDE INTERFACE

Authors
BERMAN LS GABARAEVA AD KAMANIN AV KARIMOV I KLYACHKIN LE SHARONOVA LV SHMIDT NM
Citation
Ls. Berman et al., TIME DRIFT OF PARAMETERS OF INDIUM PHOSPH IDE-SILICON DIOXIDE INTERFACE, Pis'ma v Zurnal tehniceskoj fiziki, 22(2), 1996, pp. 65-69
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Pis'ma v Zurnal tehniceskoj fiziki → ACNP
ISSN journal
03200116
Volume
22
Issue
2
Year of publication
1996
Pages
65 - 69
Database
ISI
SICI code
0320-0116(1996)22:2<65:TDOPOI>2.0.ZU;2-1