STUDY OF TI IMPLANTED ION PROFILES IN CU MONOCRYSTALS UNDER HIGH RADIATION RATE AND PULSE ANNEALING

Authors
DUVANOV SM POGREBNYAK AD LAVRENTEV VI STAIKO VV ROTSHTEIN VP PROSKUROVSKII DI
Citation
Sm. Duvanov et al., STUDY OF TI IMPLANTED ION PROFILES IN CU MONOCRYSTALS UNDER HIGH RADIATION RATE AND PULSE ANNEALING, Pis'ma v Zurnal tehniceskoj fiziki, 22(2), 1996, pp. 75-80
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Pis'ma v Zurnal tehniceskoj fiziki → ACNP
ISSN journal
03200116
Volume
22
Issue
2
Year of publication
1996
Pages
75 - 80
Database
ISI
SICI code
0320-0116(1996)22:2<75:SOTIIP>2.0.ZU;2-4