FRACTAL SURFACE CHARACTERIZATION OF CHALCOGENIDE ELECTRODEPOSITS

Citation
Pl. Antonucci et al., FRACTAL SURFACE CHARACTERIZATION OF CHALCOGENIDE ELECTRODEPOSITS, Materials science & engineering. B, Solid-state materials for advanced technology, 38(1-2), 1996, pp. 9-15
Citations number
26
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
09215107
Volume
38
Issue
1-2
Year of publication
1996
Pages
9 - 15
Database
ISI
SICI code
0921-5107(1996)38:1-2<9:FSCOCE>2.0.ZU;2-P
Abstract
Electrodeposited iron sulphide and zinc telluride thin films on tin co nductive oxide substrates were investigated by cyclic voltammetry (CV) and atomic force microscopy (AFM). CV analysis has allowed the determ ination of the potential region where selective deposition of Fe1-xS ( Is = 0.17) and ZnTe semiconductors occurs. The split island method has been applied to AFM images for the characterization of the fractal pr operties of Fe1-xS and ZnTe electrodeposits. Values of the fractal dim ension of surfaces (2.3-2.5) account for a diffusion controlled growth model for all the samples investigated. The influence of preparative variables in determining the observed results has been discussed.