G. Beshkov et al., EFFECT OF RAPID THERMAL ANNEALING ON THE PROPERTIES OF THIN CARBON-FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 38(1-2), 1996, pp. 25-28
Carbon films deposited on silicon substrates were studied after rapid
thermal annealing (RTA) by Raman spectroscopy and electrical resistanc
e measurements. The temperature and duration of RTA are related to the
form and shift of the peaks in the Raman spectra and resistance curve
of the films.