THE INFLUENCE OF OXYGEN IN PHOSPHINE ON ELECTRICAL-PROPERTIES OF UNDOPED INGAALP LAYERS GROWN BY MOCVD

Authors
POLYAKOV AY CHELNIY AA SMIRNOV NB GOVORKOV AV MILNES AG LI XL ALUEV AN ORLOV PB
Citation
Ay. Polyakov et al., THE INFLUENCE OF OXYGEN IN PHOSPHINE ON ELECTRICAL-PROPERTIES OF UNDOPED INGAALP LAYERS GROWN BY MOCVD, Materials science & engineering. B, Solid-state materials for advanced technology, 38(1-2), 1996, pp. 36-40
Citations number
14
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
38
Issue
1-2
Year of publication
1996
Pages
36 - 40
Database
ISI
SICI code
0921-5107(1996)38:1-2<36:TIOOIP>2.0.ZU;2-L
Abstract
The presence of oxygen in phosphine during MOCVD growth of undoped lay ers of InGaAlP is shown to produce a high resistivity of the samples a nd to lead to the formation of various deep states, most notably defec ts with energy levels of about E(c) - 0.5 eV.