LOW-POWER PULSED-LASER ANNEALING OF ZN-IMPLANTED INP - FIRST ENDEAVORS()

Authors
VITALI G ROSSI M PIZZUTO C ZOLLO G KALITZOVA M
Citation
G. Vitali et al., LOW-POWER PULSED-LASER ANNEALING OF ZN-IMPLANTED INP - FIRST ENDEAVORS(), Materials science & engineering. B, Solid-state materials for advanced technology, 38(1-2), 1996, pp. 72-75
Citations number
12
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
38
Issue
1-2
Year of publication
1996
Pages
72 - 75
Database
ISI
SICI code
0921-5107(1996)38:1-2<72:LPAOZI>2.0.ZU;2-I
Abstract
In this paper we report a first attempt to apply the low power pulsed- laser annealing (LPPLA) technique, already successfully used on implan ted GaAs, to a low dose Zn-implanted InP. The aim of this work is to c heck the LPPLA efficiency and to define, in analogy with the GaAs case , the eventual existence for the InP of an energy window in which the crystallinity is recovered without stoichiometric changes of the mater ial. Reflection high energy electron diffraction analysis and electric al measurements have revealed good crystalline reordering and a decrea se in the sheet resistivity in the laser-annealed samples.