OBSERVATION OF BORON DOPING-INDUCED SURFACE ROUGHENING IN SILICON MOLECULAR-BEAM EPITAXY

Boron doping induced surface roughening was observed in conventional s ilicon molecular beam epitaxy, Reflection high energy electron diffrac tion and cross-sectional transmission electron microscopy revealed tha t as growth continued, tile growth surface remained no longer planar b ut developed {113} facets. The facets evolved along with growth, and f inally resulted in a severely roughened surface. The evolution of the roughening was found to remain the same in the boron doping concentrat ion range of 1 x 10(17)-2 x 10(20) cm(-3) and the growth temperature r ange of 500-650 degrees C, This surface roughening effect is attribute d to boron segregation behavior. (C) 1996 American Institute of Physic s.