OBSERVATION OF NEGATIVE DIFFERENTIAL RESISTANCE PHENOMENON IN A 2-STEP BARRIER DIODE

Citation
Sj. Wang et al., OBSERVATION OF NEGATIVE DIFFERENTIAL RESISTANCE PHENOMENON IN A 2-STEP BARRIER DIODE, Applied physics letters, 68(23), 1996, pp. 3320-3322
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
68
Issue
23
Year of publication
1996
Pages
3320 - 3322
Database
ISI
SICI code
0003-6951(1996)68:23<3320:OONDRP>2.0.ZU;2-B
Abstract
In this work, the realization of AlxGa1-xAs/GaAs two-step barrier diod e is presented. Experimental observation on the current-voltage charac teristics of the two-step barrier diode is reported. At both room temp erature and 77 K, it shows a strong negative differential resistance u nder forward bias while no similar phenomenon was observed under rever se bias. Such an asymmetric current-voltage characteristic would open the possibility of negative differential resistance in an ac field in the absence of a dc bias. Theoretical simulation and experimental curr ent-voltage characteristics are compared and discussed. (C) 1996 Ameri can Institute of Physics.