DYNAMIC PROPERTIES OF OPTICALLY SWITCHED BISTABLE SEMICONDUCTOR-LASERS

The dynamic properties of optically switched semiconductor lasers bias ed from below-to-above threshold are presented theoretically, An analy tic expression for the carrier density in the active region of a laser with respect to time is given to discuss the switching-off time, The numerical results show that the switching-on time and the switching-of f time are governed by different mechanisms, They are related to the l aser parameters for the free-running laser. They also depend on the op tical power and the time duration of the input optical pulse and the f requency detuning between the frequency of the free-running laser and that of the input optical pulse, A small frequency detuning is desired to reduce both the switching-on and switching-off times, However, the re is an optimal detuning to maximize the energy of the output optical pulse. On the other hand, for fixed detuning and injection power, a l arger bias current results in a shorter switching-off time, but a lowe r bias current results in a shorter switching-on time.