O. Rouxditbuisson et al., SENSITIVE DIFFERENTIAL METHOD FOR THE EXTRACTION OF THE MOBILITY VARIATION IN UNIFORMLY DEGRADED MOS-TRANSISTORS, IEE proceedings. Part G. Circuits, devices and systems, 140(2), 1993, pp. 123-126
A new method for the exploitation of the characteristics of uniformly
degraded MOS transistors is proposed. The method, which is based on a
first order differential analysis of the shift observed in the I(d)(V(
g)) transfer characteristics after stress, enables an accurate determi
nation both of the threshold voltage shift and of the mobility variati
on to be accurately obtained as a function of stress (e.g. injection d
ose). The method has been tested on Fowler-Nordheim stressed MOSFETs a
nd this enabled us to demonstrate that the mobility is not a monotonou
s function of the interface charge created after stress, and, therefor
e, that no unique value for the Coulomb scattering coefficient can be
extracted.