Oa. Dyachenko et al., CRYSTAL AND MOLECULAR-STRUCTURE OF ORGANIC SEMICONDUCTOR (ET)(8)[HG4CL12]CENTER-DOT-2C(6)H(6), Russian chemical bulletin, 45(2), 1996, pp. 370-375
A new organic semiconductor, (ET)(8)[Hg4Cl12]. 2C(6)H(6), obtained in
the ET(+)-HgCl-(-)(3)- PhF system has been studied by X-ray structural
analysis. Radical cations of bis(ethylenedithio)tetrathiafulvalene (E
T) in the organic layer of the structure are packed in stacks of alpha
-type. The average angle between the planes of ET cations from adjacen
t stacks is 50.1 degrees. The anionic layer is formed by four-charge c
entrosymmetric [Hg4Cl12](4-) complexes and benzene solvate molecules.
A comparative crystal-chemical study of the salts obtained by the reac
tion in the ET(+)-HgX(3)(-)-PhY system (where X = Cl, Br, and I; Y = F
, Cl, and Br) made it possible to reveal a substantial effect of the s
izes of the X and Y atoms in the composition of the salts and on the s
tructural characteristics of the layers, which are responsible for the
various conductivities of these salts.