GROWTH, ELECTRICAL-CONDUCTIVITY AND MICROINDENTATION STUDIES OF CUINS2 SINGLE-CRYSTALS

Single crystals of copper indium disulfide (CuInS2) have been grown by chemical-vapour transport technique (CVT) using iodine as the transpo rting agent. The obtained phase was checked by X-ray diffractometry an d the presence of copper, indium and sulfur in the grown crystals was confirmed by Energy-Dispersive Spectrum Analysis (EDSA). The mechanica l properties of the grown crystals were studied using microindentation analysis. Optical-transmission measurements were done to determine th e energy gap of the grown crystals. The four-probe technique was used to measure the electrical properties of the grown crystals. The as-gro wn crystals were found to be p-type conducting and they were converted to n-type by suitable annealing treatment. The electrical parameters of both n- and p-type crystals were measured.