EMISSION-SPECTRUM OF SILICON IN THE REGION OF ANOMALOUS DISPERSION

Authors
HAO LY YANG BX XU KZ FANG ZG XU XL CHEN J CHEN YZ
Citation
Ly. Hao et al., EMISSION-SPECTRUM OF SILICON IN THE REGION OF ANOMALOUS DISPERSION, Physical review. B, Condensed matter, 47(20), 1993, pp. 13320-13322
Citations number
32
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
47
Issue
20
Year of publication
1993
Pages
13320 - 13322
Database
ISI
SICI code
0163-1829(1993)47:20<13320:EOSITR>2.0.ZU;2-Q
Abstract
We report measurements of emission spectra of single-crystal silicon b y electron impact in the region of anomalous dispersion at room temper ature. The spectral range extends from 2500 to 6500 angstrom. Direct o ptical transitions in the band structure of Si correspond to the spect rum feature obtained; the spectrum peaks occur in the region where the extinction coefficient k decreases rapidly.